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| PD - 91574B IRG4PH50U INSULATED GATE BIPOLAR TRANSISTOR Features * UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode * New IGBT design provides tighter parameter distribution and higher efficiency than previous generations * Optimized for power conversion; SMPS, UPS and welding * Industry standard TO-247AC package C Ultra Fast Speed IGBT VCES = 1200V G E VCE(on) typ. = 2.78V @VGE = 15V, IC = 24A n-channel Benefits * Higher switching frequency capability than competitive IGBTs * Highest efficiency available * Much lower conduction losses than MOSFETs * More efficient than short circuit rated IGBTs TO-247AC Absolute Maximum Ratings Parameter VCES IC @ TC = 25C IC @ TC = 100C ICM ILM VGE EARV PD @ T C = 25C PD @ T C = 100C TJ TSTG Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Q Clamped Inductive Load Current R Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy S Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw. Max. 1200 45 24 180 180 20 170 200 78 -55 to + 150 300 (0.063 in. (1.6mm) from case ) 10 lbf*in (1.1N*m) Units V A V mJ W C Thermal Resistance Parameter RJC RCS RJA Wt Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient, typical socket mount Weight Typ. --- 0.24 --- 6 (0.21) Max. 0.64 --- 40 --- Units C/W g (oz) www.irf.com 1 01/14/02 IRG4PH50U Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)CES V(BR)ECS V(BR)CES/TJ VCE(ON) VGE(th) VGE(th)/TJ gfe ICES IGES Parameter Min. Typ. Max. Units Conditions Collector-to-Emitter Breakdown Voltage 1200 -- -- V VGE = 0V, IC = 250A Emitter-to-Collector Breakdown Voltage T 18 -- -- V VGE = 0V, IC = 1.0A Temperature Coeff. of Breakdown Voltage -- 1.20 -- V/C VGE = 0V, IC = 1.0mA -- 2.56 3.5 IC = 20A -- 2.78 3.7 IC = 24A VGE = 15V Collector-to-Emitter Saturation Voltage V See Fig.2, 5 -- 3.20 -- IC = 45A -- 2.54 -- IC = 24A , TJ = 150C Gate Threshold Voltage 3.0 -- 6.0 VCE = VGE, IC = 250A Temperature Coeff. of Threshold Voltage -- -13 -- mV/C VCE = VGE, IC = 250A Forward Transconductance U 23 35 -- S VCE = 100V, IC = 24A -- -- 250 VGE = 0V, VCE = 1200V Zero Gate Voltage Collector Current -- -- 2.0 A VGE = 0V, VCE = 24V, TJ = 25C -- -- 5000 VGE = 0V, VCE = 1200V, TJ = 150C Gate-to-Emitter Leakage Current -- -- 100 nA VGE = 20V Switching Characteristics @ TJ = 25C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets Eon Eoff Ets LE Cies Coes Cres Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. 160 27 53 35 15 200 290 0.53 1.41 1.94 31 18 320 280 5.40 0.35 1.43 1.78 4.56 13 3600 160 31 Max. Units Conditions 250 IC = 24A 40 nC VCC = 400V See Fig. 8 83 VGE = 15V -- -- TJ = 25C ns 350 IC = 24A, VCC = 960V 500 VGE = 15V, RG = 5.0 -- Energy losses include "tail" -- mJ See Fig. 9, 10, 14 2.6 -- TJ = 150C -- IC = 24A, VCC = 960V ns -- VGE = 15V, RG = 5.0 -- Energy losses include "tail" -- See Fig. 11, 14 mJ -- TJ = 25C, VGE = 15V, RG = 5.0 -- IC = 20A, VCC = 960V mJ 2.9 Energy losses include "tail" -- See Fig. 9, 10, 11, 14, T J = 150C -- nH Measured 5mm from package -- VGE = 0V -- pF VCC = 30V See Fig. 7 -- = 1.0MHz Notes: Q Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. ( See fig. 13b ) R VCC = 80%(VCES), VGE = 20V, L = 10H, RG = 5.0, (See fig. 13a) S Repetitive rating; pulse width limited by maximum junction temperature. T Pulse width 80s; duty factor 0.1%. U Pulse width 5.0s, single shot. 2 www.irf.com IRG4PH50U 60 F o r b o th : Tria ngula r w a ve : I D uty c yc le: 5 0 % TJ = 1 25 C T = 9 0C s in k G ate driv e as s pe c ifie d Load Current (A) P ow er D issipa tio n = 40W 40 S q u a re w a v e : 6 0% of rate d volta ge 20 I C lam p v olta ge : 8 0% of ra ted Id e a l d io d e s 0 0.1 1 10 A 100 f, Frequency (kHz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 1000 1000 I C , Collector-to-Emitter Current (A) 100 I C, Collector-to-Emitter Current (A) 100 TJ = 150 o C TJ = 150 o C 10 10 TJ = 25 o C V = 15V 20s PULSE WIDTH GE 1 10 TJ = 25 o C V = 50V 5s PULSE WIDTH CC 5 6 7 8 9 10 11 12 1 1 VCE , Collector-to-Emitter Voltage (V) VGE , Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics www.irf.com 3 IRG4PH50U 50 4.0 40 VCE , Collector-to-Emitter Voltage(V) V = 15V 80 us PULSE WIDTH GE I C = 48 A Maximum DC Collector Current(A) 3.5 30 I C = 24 A 3.0 20 I C = 12 A 2.5 10 0 25 50 75 100 125 150 2.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 T C , Case Temperature ( C) TJ , Junction Temperature ( C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature 1 Thermal Response (Z thJC ) 0.50 0.20 0.1 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) 0.01 0.001 0.00001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = PDM x Z thJC + TC 0.1 0.0001 0.001 0.01 P DM t1 t2 1 t1 , Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4PH50U 7000 VGE , Gate-to-Emitter Voltage (V) 6000 VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc 20 VCC = 400V I C = 24A 16 C, Capacitance (pF) 5000 Cies 4000 12 3000 8 2000 C oes C res 4 1000 0 1 10 100 0 0 40 80 120 160 200 VCE , Collector-to-Emitter Voltage (V) QG , Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 5.0 VCC = 960V VGE = 15V TJ = 25C I C = 24A 100 RG = 5.0 VGE = 15V Total Switching Losses (mJ) Total Switching Losses (mJ) 4.0 VCC = 960V 10 IC = 48A IC = 24A IC = 12A 3.0 2.0 1 1.0 0.0 0 10 20 30 40 50 0.1 -60 -40 -20 0 20 40 60 80 100 120 140 160 RG, Gate Resistance ( ) T J, Junction Temperature (C) Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Junction Temperature www.irf.com 5 IRG4PH50U 20 RG = 5.0 TJ = 150C VGE = 15V VCC = 960V 1000 15 10 I C , Collector-to-Emitter Current (A) VGE = 20V T J = 125 oC Total Switching Losses (mJ) 100 10 5 0 0 10 20 30 40 SAFE OPERATING AREA 1 50 1 10 100 1000 10000 IC , Collector Current (A) VCE , Collector-to-Emitter Voltage (V) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 12 - Turn-Off SOA 6 www.irf.com IRG4PH50U L 50V 1 00 0V VC * 0 - 960V D .U .T. RL = 960V 4 X IC@25C 480F 960V R Q * Driver s am e ty pe as D .U .T.; Vc = 80% of V ce (m ax ) * Note: D ue to the 50V pow er s upply, pulse w idth a nd inductor w ill inc rea se to obta in ra ted Id. Fig. 13a - Clamped Inductive Load Test Circuit Fig. 13b - Pulsed Collector Current Test Circuit IC L D river* 50V 1000V Q R S * Driver same type as D.U.T., VC = 960V D .U .T. VC Fig. 14a - Switching Loss Test Circuit Q R 90 % S 10 % 90 % VC t d (o ff) Fig. 14b - Switching Loss Waveforms 1 0% IC 5% t d (o n ) tr Eon E ts = (E o n +E o ff ) tf t=5 s E o ff www.irf.com 7 IRG4PH50U Case Outline and Dimensions -- TO-247AC 3 .6 5 (.1 4 3 ) 3 .5 5 (.1 4 0 ) 0 .2 5 (.0 1 0 ) M D B M -A5 .5 0 (.2 1 7) -D- 1 5 .9 0 (.6 2 6 ) 1 5 .3 0 (.6 0 2 ) -B- 5 .3 0 ( .2 0 9 ) 4 .7 0 ( .1 8 5 ) 2 .5 0 (.0 8 9 ) 1 .5 0 (.0 5 9 ) 4 N O TE S : 1 D IM E N S IO N S & T O L E R A N C IN G P E R A N S I Y 14 .5 M , 1 9 8 2 . 2 C O N T R O L L IN G D IM E N S IO N : IN C H . 3 D IM E N S IO N S A R E S H O W N M ILL IM E T E R S (IN C H E S ). 4 C O N F O R M S T O JE D E C O U T L IN E T O -2 4 7 A C . 2 0 .3 0 (.8 0 0 ) 1 9 .7 0 (.7 7 5 ) 1 2 3 2X 5 .5 0 (.2 17 ) 4 .5 0 (.1 77 ) -C- LEAD 1234- A S S IG N M E N T S GATE COLLE CTO R E M IT T E R COLLE CTO R * 1 4 .8 0 (.5 8 3 ) 1 4 .2 0 (.5 5 9 ) 4 .3 0 (.1 7 0 ) 3 .7 0 (.1 4 5 ) * 3X C AS 0 .8 0 (.0 3 1 ) 0 .4 0 (.0 1 6 ) 2 .6 0 ( .1 0 2 ) 2 .2 0 ( .0 8 7 ) 2 .4 0 ( .0 9 4 ) 2 .0 0 ( .0 7 9 ) 2X 5 .4 5 (.2 1 5 ) 2X L O N G E R L E A D E D (2 0m m ) V E R S IO N A V A IL A B LE (T O -24 7 A D ) T O O R D E R A D D "-E " S U F F IX T O P A R T N U M B ER 3X 1 .4 0 (.0 5 6 ) 1 .0 0 (.0 3 9 ) 0 .2 5 (.0 1 0 ) M 3 .4 0 (.1 3 3 ) 3 .0 0 (.1 1 8 ) CONFORMS TO JEDEC OUTLINE TO-247AC (TO-3P) D im e n s ion s in M illim e te rs a n d (In c h es ) WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 http://www.irf.com/ Data and specifications subject to change without notice. 01/02 8 www.irf.com |
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